DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK31...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3111
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3111 2SK3111-S 2SK3111-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
Gate voltage rating ±30 V Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 10 A) Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25 °C) Drain current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
200 ±30 ±20 ±60 1.5 65 150 −55 to +150 20 100
V V A A W W °C °C A mJ
Total power dissipation (TA = 25 °C) Total power dissipation (TC = 25 °C) Channel temperature Storage temperature Single avalanche current Single avalanche energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
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