2SK3110

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3110 PACKAGE Isolated TO-220 FEATURES Gate voltage rating ±30 V Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A) Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode Avalanche capability rated Isolated TO-220 package ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current(DC) (TC = 25°C) Drain Current(pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 200 ±30 ±14 ±42 2.0 35 150 −55 to +150 14 98 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Note1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Documen...