2SK3107

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for 1.6 ± 0.1 PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 –0.05 0.8 ± 0.1 use as a high-speed switching device in digital circuits. D 0 to 0.1 G S 0.2 0.5 +0.1 –0 FEATURES Can be driven by a 2.5-V power source Low gate cut-off voltage 0.5 0.6 0.75 ± 0.05 1.0 1.6 ± 0.1 ORDERING INFORMATION PART NUMBER 2SK3107 PACKAGE SC-75(USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) 5 Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±0.1 ±0.4 200 150 –55 to +150 V V A A mW °C °C EQUIVALENT CIRCUIT Drain Gate Body Diode Total Power Dissipation Channel Temperature Storage Temperature Gate Protection Diode Marking: D1 Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark 2 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that thi...