N-Channel MOSFET
2SK3081
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-636A (Z) 3rd. Edition Jun 1998 Features
• Low on-r...
Description
2SK3081
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-636A (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 10mΩ typ. 4V gate drive devices. High speed switching
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
2SK3081
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 30 ±20 45 180 45
Unit V V A A A W °C °C
Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg
Note2
75 150 –55 to +150
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ±20 — — 1.0 — — 20 — — — — — — — — — Typ — — — — — 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max — — 10 ±10 2.0 14 25 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V Note3 I D = 20A, VGS = 4V Note3 I D = 20A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, I D = 20A RL = 0.5 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on sta...
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