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2SK3080

Hitachi Semiconductor
Part Number 2SK3080
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-r...
Datasheet PDF File 2SK3080 PDF File

2SK3080
2SK3080

Overview
2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd.
Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ.
(V GS = 10V, ID = 15 A) • 4V gate drive devices.
• High speed switching Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange) 3.
Source 2SK3080 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 30 120 30 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 50 150 –55 to +150 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Valu...


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