2SK3074
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3074
RF POWER MOSFET FOR VHF−AND UHF-BAND POWER A...
2SK3074
TOSHIBA FIELD EFFECT
TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3074
RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Unit: mm
z Output Power z Power Gain z Drain Efficiency
: PO ≥ 630mW : GP ≥ 14.9dB : ηD ≥ 45%
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS 25 V
Drain Current
ID 1 A
Drain Power Dissipation Channel Temperature
PD (Note 1) Tch
3 150
W JEDEC °C JEITA
— SC−62
Storage Temperature Range
Tstg
−45 to 150
°C
TOSHIBA
2−5K1D
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.05 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimate...