2SK3072

Ordering number : ENN7224 2SK3072 N-Channel Silicon MOSFET 2SK3072 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2091A [2SK3072] 0.5 0.4 0.16 0 to 0.1 Ultrahigh-speed switching. Low-voltage drive. 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.8 1.1 1 : Gate 2 : Source 3 : Drain SANYO : CP Ratings 450 ± 10 30 120 250 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=300µA, VGS=0 VDS=360V, VGS=0 VGS=± 10V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15mA ID=15mA, VGS=10V ID=15mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 450 10 ± 10 1.0 14 28 210 230 20 5 3 275 300 2.0 typ max Unit V µA µA V mS Ω Ω pF pF pF Marking : HK Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ex...