Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3058 2SK3058-S 2SK3058-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF (TYP.) • Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 ±20 +20, –10 ±55 ±165 58 1.5 150 –55 to + 150 27.5 75.6
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 2.16 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13097EJ1V0DS00 (1st edition) Date Published April 1999 NS CP(K) Printed in Japan
©
1998, 1999
2SK3058
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss t d(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 28 A VGS = 4.0 V, ID = 28 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 28 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V F = 1 MHz ID = 28 A VGS(on) = 10 V VDD = 30 V RG = 10 Ω ID = 55 A VDD = 48 V VGS = 10 V IF = 55 A, VGS = 0 V IF = 55 A, VGS = 0 V di/dt = 100A/µs 2100 550 220 36 410 130 260 45 7 13 1.0 60 100 1.0 13 MIN. TYP. 12 19 1.6 42 10 ±10 MAX. 17 27 2.0 UNIT mΩ mΩ V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10 Ω
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D13097EJ1V0DS00
2SK3058
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
100 80 60 40 20
60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
0
TC - Case Temperature - °C
TC - Case Temperature - °C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 1000
Pulsed 100
V)
ID(pulse) = 165A
VGS = 10 V
ID - Drain Current - A
PW 10 0µ
ID - Drain Current - A
100
ite d
(V
GS
=
10
=1
80 60 40 20
0µ
s
10
Lim n) ID(DC) = 55A (o DS R Po we r
1m
10
s
10
0m
s
VGS = 4.0 V
m
s
Di DC ss ipa
s
tio
n
1 0.1
TC = 25˚C Single Pulse 1
Lim
ite
d
0
1
2
3
4
10
100
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100
ID - Drain Current - A
10
1
TA = 125˚C 75˚C 25˚C −25˚C
0.1 Pulsed VDS = 10 V 4 5
0
1
2
3
VGS - Gate to Source Voltage - V
Data Sheet D13097EJ1V0DS00
3
2SK3058
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - ˚C/W
100
Rth(ch-A)= 83.3 ˚C/W
10 Rth(ch-C)= 2.16 ˚C/W 1
0.1
0.01 0.001 10 µ TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
| yfs | - Forward Transfer Admittance - S
100 Tch = −25˚C 25˚C 75˚C 10 125˚C
RDS(on) - Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 70 60 50 40 30 20 10 ID = 28 A 0 10 20 30 Pulsed
1
0.1 0.1
VDS = 10 V Pulsed 1.0 10 100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source .