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2SK3058 Dataheets PDF



Part Number 2SK3058
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK3058 Datasheet2SK3058 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3058 2SK3058-S 2SK3058-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF (TYP.) • Built-in Gate Protec.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3058 2SK3058-S 2SK3058-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, –10 ±55 ±165 58 1.5 150 –55 to + 150 27.5 75.6 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 2.16 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13097EJ1V0DS00 (1st edition) Date Published April 1999 NS CP(K) Printed in Japan © 1998, 1999 2SK3058 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss t d(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 28 A VGS = 4.0 V, ID = 28 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 28 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V F = 1 MHz ID = 28 A VGS(on) = 10 V VDD = 30 V RG = 10 Ω ID = 55 A VDD = 48 V VGS = 10 V IF = 55 A, VGS = 0 V IF = 55 A, VGS = 0 V di/dt = 100A/µs 2100 550 220 36 410 130 260 45 7 13 1.0 60 100 1.0 13 MIN. TYP. 12 19 1.6 42 10 ±10 MAX. 17 27 2.0 UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 Ω VGS RL VDD ID 90 % 90 % ID VGS Wave Form 0 10 % VGS(on) 90 % BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID Wave Form 0 10 % td(on) ton tr td(off) toff 10 % tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D13097EJ1V0DS00 2SK3058 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 100 80 60 40 20 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 0 TC - Case Temperature - °C TC - Case Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 1000 Pulsed 100 V) ID(pulse) = 165A VGS = 10 V ID - Drain Current - A PW 10 0µ ID - Drain Current - A 100 ite d (V GS = 10 =1 80 60 40 20 0µ s 10 Lim n) ID(DC) = 55A (o DS R Po we r 1m 10 s 10 0m s VGS = 4.0 V m s Di DC ss ipa s tio n 1 0.1 TC = 25˚C Single Pulse 1 Lim ite d 0 1 2 3 4 10 100 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 ID - Drain Current - A 10 1 TA = 125˚C 75˚C 25˚C −25˚C 0.1 Pulsed VDS = 10 V 4 5 0 1 2 3 VGS - Gate to Source Voltage - V Data Sheet D13097EJ1V0DS00 3 2SK3058 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-A)= 83.3 ˚C/W 10 Rth(ch-C)= 2.16 ˚C/W 1 0.1 0.01 0.001 10 µ TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S 100 Tch = −25˚C 25˚C 75˚C 10 125˚C RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 70 60 50 40 30 20 10 ID = 28 A 0 10 20 30 Pulsed 1 0.1 0.1 VDS = 10 V Pulsed 1.0 10 100 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source .


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