2SK3056

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) Low Ciss : Ciss = 920 pF TYP. Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, −10 ±32 ±100 34 1.5 150 –55 to +150 16 25.6 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.68 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No...