2SK3054

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3054 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3054 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3054 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. ORDERING INFORMATION PART NUMBER 2SK3054 PACKAGE SC-70 FEATURES Can be driven by a 2.5-V power source Low gate cut-off voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) Gate to Source Voltage (VDS= 0 V) Drain Current (DC) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 50 ±7 ±0.1 ±0.2 150 150 –55 to +150 V V A A mW °C °C Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14209EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999 2SK3054 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL I DSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ...