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2SK3033

Panasonic Semiconductor

Silicon N-Channel Power F-MOS FET


Description
Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving c...



Panasonic Semiconductor

2SK3033

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