2SK2989

2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) 2SK2989 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement−mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 50 50 ±20 5 15 0.9 150 −55~150 V V V A W °C °C JEDEC TO-92MOD JEITA — TOSHIBA 2-5J1C Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, chan...