2SK2984

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES Low on-resistance RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A) Low Ciss Ciss = 2850 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK2984 2SK2984-S 2SK2984-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note3 Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±40 ±160 1.5 60 150 −55 to +150 V V A A W W °C °C Note2 Total Power Dissipation (TA = 25°C) Total Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Notes.1 VGS = 0 V 2 VDS = 0 V 3 PW ≤ 10 µ s, Duty Cycle ≤ 1 % . The information in this document is subject to change without notice. Document No. D12356EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan © 1998 2SK2984 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source C...