DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This prod...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2983
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for high current switching application.
FEATURES
Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) Low Ciss Ciss = 1200 pF TYP. Built-in gate protection diode
ORDERING INFOMATION
PART NUMBER 2SK2983 2SK2983-S 2SK2983-ZJ PACKAGE TO-220AB TO-262 TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note3 Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±30 ±120 1.5 50 150 −55 to +150
V V A A W W °C °C
Note2
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Notes1. VGS = 0 V 2. VDS = 0 V 3. PW ≤ 10 µ s, Duty Cycle ≤ 1 % .
The information in this document is subject to change without notice.
Document No. D12357EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan
©
1998
2SK2983
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source C...