2SK2981

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) FEATURES 6.5 ±0.2 5.0 ±0.2 1.6 ±0.2 1.5 –0.1 Low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A) Low Ciss : Ciss = 860 pF (TYP.) Built-in gate protection diode +0.2 2.3 ±0.2 0.5 ±0.1 4 1 2 3 1.3 MAX. 7.0 MIN. 5.5 ±0.2 13.7 MIN. 0.6 ±0.1 2.3 2.3 0.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2981 2SK2981-Z PACKAGE TO-251 0.8 4.3 MAX. 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-251(MP-3) 1.5 –0.1 +0.2 0.75 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 12.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note 1.3 MAX. VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±20 ±80 20 150 –55 to + 150 V V A A W °C °C 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 MIN. 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-252(MP-3Z) (SURFACE MOUNT TYPE) Total Power Dissipation (Tc = 25 °C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty cycle ≤ 1 % EQUIVALENT CIRCUIT Drain 0.5 1 2 3 5.5 ±0.2 10.0 MAX. 4 1.0 MIN. 1.5 TYP. TO-252 Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and sou...