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2SK2974

Part Number	2SK2974
Manufacturer	Mitsubishi Electric Semiconductor
Description	RF POWER MOS FET
Published	Mar 30, 2005
Detailed Description	MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF...
Datasheet	2SK2974 PDF File

Overview

MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.
4dB @VDD=7.
2V,f=450MHz,Pin=30dBm • High efficiency:55% typ.
• Source case type seramic package (connected internally to source) 3 4.
9 1 2 2.
0 3.
50 t=1.
2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No.
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source volta...

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