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2SK2973

RF POWER MOS FET

Description

MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm High efficiency:55% typ. Source case type SOT-89 package (connected internally ...

Mitsubishi Electric Semiconductor

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