2SK2958S

2SK2958(L),2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 5.5mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 75 300 75 100 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — 35 — — — — — — — — — Typ — — — — — 5.5 9.0 60 4100 2700 800 45 430 460 440 1.0 90 Max — — 10 ±10 2.0 7.0 14.0 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 75A, VGS = 0 I F = 75A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 40A, VGS = 10V Note3 I D = 40A, VGS = 4V Note3 I D = 40A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 40A RL = 0.25Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on st...