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2SK2957L

Silicon N Channel MOS FET

Description

2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features Low on-resistance R DS(on) = 7mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Dr...

Hitachi Semiconductor

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