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2SK2932

Hitachi Semiconductor
Part Number 2SK2932
Manufacturer Hitachi Semiconductor
Description Silicon N Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555B (Z) 3rd. Edition Jun 1998 Features • Low on-r...
Datasheet PDF File 2SK2932 PDF File

2SK2932
2SK2932

Overview
2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS =0.
055 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source 2SK2932 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.
5 20 150 –55 to +150 Unit V V A A A A mJ W °C ...


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