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2SK2930

Silicon N Channel MOS FET

Description

2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS =0.020 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source ...

Hitachi Semiconductor

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