2SK2915

2SK2915 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 16 64 150 1026 16 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and in...