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2SK2912 Dataheets PDF



Part Number 2SK2912
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N Channel MOS FET
Datasheet 2SK2912 Datasheet2SK2912 Datasheet (PDF)

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche .

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2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2912(L), 2SK2912(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) Min 60 ±20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max — — ±10 10 2.5 20 40 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 40A, VGS = 0 I F = 40A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V*1 I D = 20A, VGS = 4V*1 I D = 20A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz I D = 20A, VGS = 10V RL = 1.5Ω Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SK2912(L), 2SK2912(S) Main Characteristics Power vs. Temperature Derating 100 Pch (W) 1000 I D (A) 300 100 30 Drain Current 50 10 3 1 0.3 0 50 100 150 Tc (°C) 200 DC Maximum Safe Operation Area 75 10 PW Op er 10 0 Channel Dissipation = 1 10 ms c= m µs µs s ot) ) ati (1 on sh 25 Operation in this area is limited by R DS(on) (T 25 °C Case Temperature Ta = 25 °C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 10 V 6V 4.5 V 50 4V (A) Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 40 40 30 ID Pulse Test 3.5 V 30 Drain Current Tc = 75°C 25°C 20 Drain Current 20 –25°C 10 VGS = 3 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2912(L), 2SK2912(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 2.0 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 1.6 1.2 I D = 50 A 0.05 VGS = 4 V 0.8 0.02 0.01 10 V 0.4 20 A 10 A 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0.005 1 2 10 20 50 5 Drain Current I D (A) 100 0 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.05 Pulse Test 0.04 I D = 20 A 10 A Forward Transfer Admittance vs. Drain Current 100 50 Tc = –25 °C 25 °C 75 °C 20 10 5 0.03 V GS = 4 V 0.02 50 A 10, 20 A 10 V 0.01 0 –40 2 1 1 2 V DS = 10 V Pulse Test 10 20 50 5 Drain Current I D (A) 100 0 40 80 120 160 Case Temperature Tc (°C) 5 2SK2912(L), 2SK2912(S) Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 5000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 2000 1000 500 Ciss Coss 200 100 50 Crss 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 I D = 40 A V DD = 10 V 25 V 50 V V DS 20 1000 300 100 30 10 3 1 0.1 Switching Characteristics Switching Time t (ns) 80 16 t d(off) tf tr t d(on) Drain to Source Voltage 60 V GS 12 40 8 20 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 Gate to Source Voltage V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 0 6 2SK2912(L), 2SK2912(S) Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) 50 Reverse Drain Current I DR (A) 200 I AP = 40 A V DD = 25 V duty < 1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating 40 10 V 30 5V 20 V GS = 0, –5 V 160 120 80 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 40 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP.


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