2SK2907-01R
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low dr...
2SK2907-01R
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-3PF
15.5 ±0.3 ø3.2 ±0.2
5.5 ±0.2 9.3 ±0.3
5.5
±0.3
3.2 +0.3
2.3 ±0.2
2.1±0.3
1.6 ±0.3 1.1 —0.1
+0.2
Applications
Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
20 Min
21.5
±0.3
5.45 ±0.2
5.45 ±0.2
0.6 +0.2
3.5 ±0.2
1. Gate 2. Drain 3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±100 ±400 ±30 1268.3 125 +150 -55 to +150 Unit
Equivalent circuit schematic
Drain(D)
V A A V mJ W °C °C *1 L=0.169mH, Vcc=24V
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ...
