2SK2886

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) VDSS VDGR VGSS ID IDP PD EAS 50 V 50 V ±20 V 45 A 135 A 40 W 350 mJ JEDEC JEITA — SC-67 Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range IAR EAR Tch Tstg 45 4 150 −55 to 150 A mJ °C °C TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e...