2SK2883
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2883
Chopper Regulator, DC−DC Convert...
2SK2883
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2883
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
z High forward transfer admittance : |Yfs| = 2.6 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
800 800 ±30
3 9 75
300
3 7.5 150 −55~150
V V V A A W
mJ
A mJ °C °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Chara...