2SK2869
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-570 1st. Edition Features
Low on-resistance R DS = 0.033 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK2869
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source v...
