2SK2865
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2865
Chopper Regulator, DC/DC Converter ...
2SK2865
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2865
Chopper
Regulator, DC/DC Converter and Motor Drive Applications
Low drain−source ON-resistance
: RDS (ON) = 4.2 Ω (typ.)
High forward transfer admittance
: |Yfs| = 1.7 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
1.5 ± 0.2
5.5 ± 0.2 9.5 ± 0.3
1.2 MAX.
0.8 MAX. 0.6 ± 0.15
1
1.05 MAX. 23
1.1 ± 0.2 0.6 MAX.
2.3 ± 0.2 0.1 ± 0.1
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms) (Note 1)
Pulse (t = 100 μs) (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID
IDP
IDP
PD
EAS
IAR EAR Tch Tstg
600 600 ±30
2
5
8
20 93
2 2 150 −55 to 150
V V V
A
A
A
W
mJ
A mJ °C °C
2.3 ± 0.15 2.3 ± 0.15
1. GATE 2. DRAIN
(HEAT SINK) 3. SOURSE
2 1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe...