2SK2851

2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2851 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 5 20 5 5 2.14 0.9 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2851 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) Min 60 ±20 — — 1.0 — — 5 — — — — — — — — — Typ — — — — — 0.055 0.07 7 500 260 110 10 30 100 75 0.9 50 Max — — 10 ±10 2.0 0.07 0.1 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I D = 5A, VGS = 0 I F = 5A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 2.5A, VGS = 10V*1 I D = 2.5A, VGS = 4V*1 I D = 2.5A, VD...