2SK2839
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2839
Chopper Regulator, DC−DC Converter ...
2SK2839
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2839
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l 4 V gatedrive l Low drain−source ON resistance : RDS (ON) = 30 mΩ (typ.) l High forward transfer admittance : |Yfs| = 11 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 30 V) l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(Note 2)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP
PD
EAS
IAR EAR Tch Tstg
Rating
30 30 ±20 10 40
2.5
282
10 0.25 150 −55~150
Unit
V V V A A
W
mJ
A mJ °C °C
JEDEC
—
JEITA
—
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to ambient
Rth (ch−a)
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 2 mH, RG = 25 Ω, IAR = 10 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature. This
transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-06-05
Electrical Ch...