2SK2825

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: Vth = 0.5~1.0 V Small package Marking Equivalent Circuit 2SK2825 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 http://store.iiic.cc/ 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate thresh...