2SK2796L

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 5 20 5 5 2.14 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK2796(L), 2SK2796(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.0 — — 2.5 — — — — — — — — — Typ — — — — — 0.12 0.16 4.0 180 90 30 9 25 35 55 1.0 40 Max — — 10 ±10 2.0 0.16 0.25 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 5A, VGS = 0 I F = 5A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 3 A, VGS = 10V Note4 I D = 3A, VGS = 4V Note4 I D = 3A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 3A RL = 10Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Zero ga...