2SK2788
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-538 1st. Edition Features
Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) Low drive current High speed switching 4V gate drive devices.
Outline
UPAK
3
D
2
1
4
G
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2788
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to so...
