Silicon N-Channel MOS FET
2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-543 1st. Edition Features
• Low on-...
Description
2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-543 1st. Edition Features
Low on-resistance R DS = 20 mΩ typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±20 20 80 20 20 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2735(L), 2SK2735(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 20 35 16 750 520 210 16 225 85 90 1.0 40 Max — — ±10 10 2.0 28 50 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 20A, VGS = 0 diF/ dt = 50A/µs I F = 20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 10V*1 I D = 10A, VGS = 4V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz I D = 10A, VGS = 10V RL = 1Ω
Gate to source cuto...
Similar Datasheet