Silicon N-Channel MOSFET
2SK2734
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-520 1st. Edition Features
• Low on-resistance R DS...
Description
2SK2734
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-520 1st. Edition Features
Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A
Outline
TO-92MOD.
D
G
3 S
2
1
1. Source 2. Drain 3. Gate
2SK2734
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)*
1
Ratings 30 ±20 5 20 5 0.9 150 –55 to +150
Unit V V A A A W °C °C
Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Pch Tch Tstg
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 30 ±20 — — 1.0 — — 4 — — — — — — — — — Typ — — — — — 0.04 0.055 7 550 380 155 14 80 80 65 1.0 40 Max — — 10 ±10 2.0 0.055 0.08 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = ...
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