2SK2724

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 10.0 ±0.3 FEATURES Low On-Resistance 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A) Low Ciss Ciss =1 200 pF Typ. Built-in G-S Protection Diode Isolated TO-220 package 15.0 ±0.3 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) Channel Temperature Storage Temperature * PW ≤ 10 µs, duty cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 60 ± 20 ± 35 ± 140 2.0 30 150 –55 to +150 V V A A W W ˚C ˚C MP-45F (ISOLATED TO-220) Drain Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D10515EJ1V0DS00 (1st edition) Date Published April 1996 P...