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2SK2719 Dataheets PDF



Part Number 2SK2719
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOS Type Field Effect Transistor
Datasheet 2SK2719 Datasheet2SK2719 Datasheet (PDF)

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20.

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2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS DGR Rating 900 900 ±30 3 Unit V V V 1. Gate 2. Drain (heat sink) 3. Source VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tstg A 9 125 295 3 12.5 150 −55 to 150 W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics S Thermal resistance, channel to case Thermal resistance, channel to ambient ymbol Rth (ch-c) Rth (ch-a) 50.0 Max 1.0 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 http://www.Datasheet4U.com 2SK2719 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf ton 10 V 0V 4.7 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.5 A VDS = 20 V, ID = 1.5 A Min ⎯ ±30 ⎯ 900 2.0 ⎯ 0.65 ⎯ ⎯ ⎯ 70 ⎯ VOUT ⎯ 55 ⎯ ns ⎯ 30 ⎯ 15 Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 3.7 2.6 750 10 Max ±10 ⎯ 100 ⎯ 4.0 4.3 ⎯ ⎯ ⎯ ⎯ pF ⎯ Unit μA V μA V V Ω S pF pF ID = 1.5 A RL = 133 Ω VDD ∼ − 200 V Duty ≤ 1%, tw = 10 μs Turn-off time T.


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