2SK2690-01

2SK2690-01 FAP-IIIB Series FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range Symbol VDS ID ID p VGS EAV *1 PD Tch Tstg Ratings 60 ±80 ±320 ±20 599 125 +150 -55 to +150 Unit V A A V mJ W °C °C *1 L=0.125mH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Symbol BVDSS VGS(th) IDSS IGSS RDS(on) Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID= 1mA VGS=0V ID= 1mA VDS=VGS VDS=60V VGS=0V VGS=±20V VDS=0V ID=40A ID=40A VDS=25V VDS=25V VGS=0V f=1MHz Tch=25°C Tch=125°C VGS=4V VGS=10V VCC=30V ID=75A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=160A...