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2SK2685

Part Number	2SK2685
Manufacturer	Hitachi Semiconductor
Description	GaAs HEMT
Published	Mar 30, 2005
Detailed Description	2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise charact...
Datasheet	2SK2685 PDF File

Overview

2SK2685 GaAs HEMT ADE-208-400 1st.
Edition Application UHF low noise amplifier Features • Excellent low noise characteristics.
Fmin = 0.
83 dB Typ.
(3 V, 10 mA, 2 GHz) • High associated gain.
Ga = 17 dB Typ.
(3 V, 10 mA, 2 GHz) • High voltage.
VDS = 6 or more voltage.
• Small package.
(CMPAK-4) Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate 3.
Source 4.
Drain 2SK2685 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 –6 –7 20 100 125 –55 to +125 Unit V V V mA mW °C °C Attention: This device is very sensiti...

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