2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET High Speed Power Switching
ADE-208-542 1st. Edition Features
Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switching
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2684(L), 2SK2684(S)
Absolute Maximum Ratings ...
