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2SK2597

NEC
Part Number 2SK2597
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATI...
Datasheet PDF File 2SK2597 PDF File

2SK2597
2SK2597

Overview
PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • High output, high gain PO = 100 W, GL = 13 dB (TYP.
) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.
) (f = 960 MHz) • Low intermodulation distortion • Covers all base station frequencies such as 800-MHz PDC and GSM • High-reliability gold electrodes • Hermetic sealed package • Internal matching circuit • Push-pull structure PACKAGE DRAWING (Unit: mm) 45˚ G1 S G2 45˚ φ 3.
3±0.
3 11.
4±0.
3 19.
4±0.
4 D1 D2 1.
4 3.
2±0.
2 ±0.
3 3.
2±0.
2 13.
5±0.
3 28.
0±0.
3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain-source voltage ...


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