2SK2570

2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings 20 ±10 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 20 ±10 — — 0.5 — Typ — — — — — 0.8 Max — — 1.0 ±5.0 1.5 1.1 Unit V V µA µA V Ω Ω S Test Conditions I D = 10µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = 10µA, VDS = 5V I D = 100 mA VGS = 4V *1 — 1.3 2.2 I D = 40 mA VGS = 2.5V *1 Forward transfer admittance |yfs| Ciss Coss 0.22 0.35 — I D = 100 mA VDS = 10V *1 Input capacitance Output capacitance — — — — — — — 45 33 9.6 20 60 240 140 — — — — — — — pF pF pF ns ns ns ns VDS = 10V VGS = 0 f = 1MHz VGS = 5V, ID = 100 mA RL = 100Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Reverse transfer capacitance Crss Turn-on delay time Rise time ...