2SK2569
Silicon N-Channel MOS FET
ADE-208-384 1st. Edition
Application
Low frequency power switching
Features
Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK).
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
2SK2569
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source v...
