2SK2529
Silicon N-Channel MOS FET
ADE-208-356F 7th. Edition
Application
High speed power switching
Features
Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
D G
12 3
1. Gate 2. Drain 3. Source
S
2SK2529
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source ...
