Document
2SK2520-01MR
FAP-II Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
200V
0,4Ω
10A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 200 200 10 40 ±30 30 150 -55 ~ +150 Unit V V A A V W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=200V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=10A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
Min. 200 2,5
Typ. 3,0 10 0,2 10 0,35 4,5 500 110 50 10 30 30 20 1,15 130 750
Max. 3,5 500 1,0 100 0,4 750 170 80 20 50 50 30 1,8
2,0
10,0
Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 62,5 4,17
Unit °C/W °C/W
N-channel MOS-FET
200V
0,4Ω
2SK2520-01MR
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=5A; VGS=10V
10A
30W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
1
RDS(ON) [Ω ]
↑ 2
ID [A]
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source On-State-Resistance
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Typical Transconductance
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
RDS(ON) [Ω ]
↑
gfs [S]
↑ 5
VGS(th) [V]
4
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitances
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg); ID=10A
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test Tch=25°C; VGS=0V
↑
C [nF]
↑
VDS [V]
↑
VGS [V]
↑
IF [A]
7
8
9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Power Dissipation
PD=f(Tc)
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
Zth(ch-c) [K/W]
↑
Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
↑
PD[W]
10
↑
ID [A]
12
Tch [°C]
→
VDS [V]
→
t [s]
→
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
.