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2SK2520-01MR Dataheets PDF



Part Number 2SK2520-01MR
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet 2SK2520-01MR Datasheet2SK2520-01MR Datasheet (PDF)

2SK2520-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 200V 0,4Ω 10A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current.

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2SK2520-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 200V 0,4Ω 10A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 200 200 10 40 ±30 30 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=200V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=10A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 200 2,5 Typ. 3,0 10 0,2 10 0,35 4,5 500 110 50 10 30 30 20 1,15 130 750 Max. 3,5 500 1,0 100 0,4 750 170 80 20 50 50 30 1,8 2,0 10,0 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 4,17 Unit °C/W °C/W N-channel MOS-FET 200V 0,4Ω 2SK2520-01MR FAP-II Series Drain-Source On-State Resistance RDS(on) = f(Tch); ID=5A; VGS=10V 10A 30W > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ 1 RDS(ON) [Ω ] ↑ 2 ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source On-State-Resistance RDS(on)=f(ID); 80µs pulse test; TC=25°C Typical Transconductance gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ RDS(ON) [Ω ] ↑ gfs [S] ↑ 5 VGS(th) [V] 4 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristics VGS=f(Qg); ID=10A Forward Characteristics of Reverse Diode IF=f(VSD); 80µs pulse test Tch=25°C; VGS=0V ↑ C [nF] ↑ VDS [V] ↑ VGS [V] ↑ IF [A] 7 8 9 VDS [V] → Qg [nC] → VSD [V] → Power Dissipation PD=f(Tc) Safe Operation Area ID=f(VDS): D=0,01, Tc=25°C Zth(ch-c) [K/W] ↑ Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T ↑ PD[W] 10 ↑ ID [A] 12 Tch [°C] → VDS [V] → t [s] → Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 .


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