2SK2498

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK2498 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 2.7±0.2 FEATURES Super Low On-State Resistance RDS (on)1 ≤ 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 14 mΩ (VGS = 4 V, ID = 25 A) 3.2±0.2 4±0.2 15.0±0.3 High Avalanche Capability Ratings Isolate TO-220 Package Buit-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ± 20 ± 50 ± 200 35 2.0 150 50 250 V V A A W W ˚C 1 2 3 2.54 0.7±0.1 1.3±0.2 1.5±0.2 2.54 13.5MIN. 12.0±0.2 Low Ciss Ciss = 3400 pF TYP. 3±0.1 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C A mJ MP-45F (ISOLATED TO-220) Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Gate Body Diode Gate Protection Diode Source Document No. D10044EJ1V0DS00 (1st edition) Date Published July 1995 P Printed in Japan © 1995 2SK2498 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on)1 RDS (on)2 Gate to Source Cutoff Voltage Forward T...