DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2483
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK24...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2483
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2483 is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
FEATURES
Low On-Resistance
RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A)
10.0±0.3
3.2±0.2
4.5±0.2 2.7±0.2
15.0±0.3
3±0.1 4±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 %
G
VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS = 25 Ω, VGS = 20 V → 0
± 30 ± 3.5 ± 10.5 40 2.0 150 3.5 147
V A A W W ˚C A mJ
1 2 3 0.7±0.1 2.54
1.3±0.2 1.5±0.2 2.54
13.5MIN.
VDSS
900
V
12.0±0.2
Low Ciss Ciss = 1 200 pF TYP. High Avalanche Capability Ratings Isolated TO-220 Package
2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source
–55 to +150 ˚C
** Starting Tch = 25 ˚C, R
MP-45F (ISOLATED TO-220)
Drain
Body Diode Gate
Source
Document No. D10275EJ1V0DS00 (1st edition) Date Published September 1995 P Printed in Japan
©
1995
2SK2483
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Rev...