2SK2476

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2476 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES Low On-Resistance RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 800 ± 30 ± 3.0 ± 9.0 40 2.0 150 3.0 37.8 V V A A W W ˚C A mJ 1 2 3 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. 12.0±0.2 Low Ciss Ciss = 590 pF TYP. High Avalanche Capability Ratings Isolated TO-220 Package 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 MP-45F (ISOLATED TO-220) Drain Body Diode Gate Source Document No. D10268EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2476 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfe...