N-Channel MOSFET
Ordering number:EN695G
N-Channel Junction Silicon FET
2SK242
Low-Frequency General-Purpose Amplifier Applications
Feat...
Description
Ordering number:EN695G
N-Channel Junction Silicon FET
2SK242
Low-Frequency General-Purpose Amplifier Applications
Features
· Ultrasmall-sized package permitting 2SK242-applied sets to be made small and slim.
· Small Crss (Crss=0.04pF typ).
Package Dimensions
unit:mm 2024B
[2SK242]
0.4 3
0.16 0 to 0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VGDO IG ID PD Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage
Forward Transfer Admittance
V(BR)GDO IGSS IDSS*
VGS(off) | yfs |1
| yfs |2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
* : The 2SK242 is classified by IDSS as follows : (unit : mA).
IG=–10µA VGS=–0.5V, VDS=0 VDS=5V, VGS=0 VDS=5V, ID=10µA VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=100MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz
0.6 2 1.5 1.2 3 3.0 2.5 4 6.0 5.0 5 12.0
0.8 1.1
1 : Gate 2 : Drain 3 : Source SANYO : CP
Ratings –20 10 20 150 125
–55 to +125
Unit V mA mA
mW ˚C ˚C
Ratings min typ max
Unit
–20 V
–10 nA
0.6* 12.0* mA
–2.5 V
2.0 6.0
mS
2.0 6.0
mS
4.0 pF
4.0 pF
0.04 0.15 pF
Continued on next page.
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