2SK2415-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) + 0.2 1.5 – 0.1 6.5 ± 0.2 2.3 ± 0.2 0.5 ± 0.1 FEATURES 1.6 ± 0.2 5.0 ± 0.2 4 RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A) 1 2 3 Low Ciss Ciss = 570 pF TYP. 1.3 MAX. QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2.3 2.3 7.0 MAX. 5.5 ± 0.2 13.7 MIN. Low On-Resistance 0.6 ± 0.1 0.6 ± 0.1 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-251 (MP-3) 6.5 ± 0.2 5.0 ± 0.2 + 0.2 1.5 – 0.1 0.75 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ± 8.0 ±32 20 1.0 150 8.0 6.4 V 0.8 4.3 MAX. 2.3 ± 0.2 0.5 ± 0.1 A A W W °C A mJ 12.0 MIN. 1.3 MAX. 0.9 MAX. 0.8 MAX. 2.3 2.3 0.8 –55 to +150 °C 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-252 (...